Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

被引：42

作者：

Hwang, Injun ^{[1
]}

Oh, Jaejoon ^{[1
]}

Choi, Hyuk Soon ^{[1
]}

Kim, Jongseob ^{[1
]}

Choi, Hyoji ^{[1
]}

Kim, Joonyong ^{[1
]}

Chong, Soogine ^{[1
]}

Shin, Jaikwang ^{[1
]}

Chung, U-In ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Samsung Adv Inst Technol, Yongin 446712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 05期

关键词：

High-electron-mobility transistor (HEMT); p-GaN bridge; p-GaN gate HEMT; threshold voltage; Schottky contact; source-connected p-GaN; CONTACT RESISTANCE; OHMIC CONTACTS; ENHANCEMENT;

D O I：

10.1109/LED.2013.2249038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A pathway to increase the threshold voltage (V-TH) of p-GaN gate high-electron-mobility transistors (HEMTs) is presented. The hole depletion width in the p-GaN layer at the gate interface is one of the key controlling factors of V-TH in p-GaN gate HEMTs. In order to increase the depletion width, we devise a new device structure of p-GaN gate HEMT having a source-connected p-GaN bridge. We demonstrate that a bridged p-GaN gate HEMT structure increases the V-TH from 0.93 to 2.44 V.

引用

收藏

页码：605 / 607

页数：3

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