Mixed CNT Bundles as VLSI Interconnects

被引:0
|
作者
Karthikeyan [1 ]
Mallick, P. S. [1 ]
机构
[1] VIT Univ, Sch Elect Engn, Vellore 632014, Tamil Nadu, India
关键词
Carbon nanotubes; Delay; Interconnects; copper;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Scaling of integrated circuits leads to increase in design complexity of the transistors. Interconnect delay, Power dissipation and electromagnetic interferences arises due to increase in resistance and capacitance at the nanometer level. Sub threshold operation of devices for ultra-low power requirement necessitates the design issues of interconnects. Carbon nanotube (CNT) interconnects are the better alternative to copper interconnects, mainly due to the excellent properties of carbon nanotubes. CNTs have higher strength and excellent thermal and electrical properties. Current carrying capacity of CNT is nearly 6 10 times that of copper. CNT are basically classified as single walled CNTs and Multiwall CNTs. In this paper, analysis on SWCNT, DWCNT and Mixed CNT bundles as interconnects were done. The performances of mixed CNT bundles are better in delay compared to SWCNT bundles and DWCNT bundles.
引用
收藏
页码:987 / 990
页数:4
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