Continuous-wave lasing at 100°C in 1.3 μm quantum dot microdisk diode laser

被引：30

作者：

Kryzhanovskaya, N. V. ^{[1
]}

Moiseev, E. I. ^{[1
]}

Kudashova, Yu. V. ^{[1
]}

Zubov, F. I. ^{[1
]}

Lipovskii, A. A. ^{[1
,4
]}

Kulagina, M. M. ^{[2
]}

Troshkov, S. I. ^{[2
]}

Zadiranov, Yu. M. ^{[2
]}

Livshits, D. A. ^{[3
]}

Maximov, M. V. ^{[1
,4
]}

Zhukov, A. E. ^{[1
,4
]}

机构：

[1] St Petersburg Acad Univ, St Petersburg 194021, Russia

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Innolume GmbH, D-44263 Dortmund, Germany

[4] Peter Great St Petersburg Polytech Univ, St Petersburg, Russia

来源：

ELECTRONICS LETTERS | 2015年 / 51卷 / 17期

基金：

俄罗斯基础研究基金会;

关键词：

Compendex;

D O I：

10.1049/el.2015.2325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 31 mu m in diameter microdisk laser with an InAs/InGaAs quantum dot active region has been tested in the continuous-wave regime at elevated temperatures. Lasing is achieved up to 100 degrees C with a threshold current of 13.8 mA. The emission spectrum demonstrates single-mode lasing at 1304 nm with a side mode suppression ratio of 24 dB and a dominant mode linewidth of 35 pm.

引用

页码：1354 / +

页数：2

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