Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

被引：890

作者：

Nakayama, H. ^{[1
,2
]}

Althammer, M. ^{[3
,4
,5
]}

Chen, Y. -T. ^{[6
]}

Uchida, K. ^{[1
,7
]}

Kajiwara, Y. ^{[1
]}

Kikuchi, D. ^{[1
,8
]}

Ohtani, T. ^{[1
]}

Gepraegs, S. ^{[3
]}

Opel, M. ^{[3
]}

Takahashi, S. ^{[1
]}

Gross, R. ^{[3
,9
]}

Bauer, G. E. W. ^{[1
,6
,8
]}

Goennenwein, S. T. B. ^{[3
]}

Saitoh, E. ^{[1
,8
,10
,11
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan

[3] Bayer Akad Wissensch, Walther Meissner Inst, D-85748 Garching, Germany

[4] Univ Alabama, Ctr Mat Informat Technol MINT, Tuscaloosa, AL 35487 USA

[5] Univ Alabama, Dept Chem, Tuscaloosa, AL 35487 USA

[6] Delft Univ Technol, Kavli Inst NanoSci, NL-2628 CJ Delft, Netherlands

[7] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[8] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[9] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany

[10] Japan Sci & Technol Agcy, CREST, Tokyo 1020076, Japan

[11] Japan Atom Energy Agcy, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 20期

关键词：

ROOM-TEMPERATURE;

D O I：

10.1103/PhysRevLett.110.206601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report anisotropic magnetoresistance in Pt vertical bar Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it "spin Hall magnetoresistance.''

引用

页数：5

共 35 条

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