Shot noise in low-resistance magnetic tunnel junctions

被引:20
作者
George, PK [1 ]
Wu, Y
White, RM
Murdock, E
Tondra, M
机构
[1] St Cloud State Univ, Dept Elect & Comp Engn, St Cloud, MN 56301 USA
[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Ctr Data Storage Syst, Pittsburgh, PA 15213 USA
[3] Seagate Recording Heads, Minneapolis, MN 55435 USA
[4] Nonvolatile Elect Inc, Eden Prairie, MN 55344 USA
关键词
Tunnelling magnetoresistance - Acoustic noise measurement - Tunnel junctions - Magnetic devices;
D O I
10.1063/1.1446210
中图分类号
O59 [应用物理学];
学科分类号
摘要
Shot noise measurements made on low-resistance magnetic tunnel junctions show results inconsistent with the resistance of the samples examined. The results yield lower than expected shot noise which is consistent with parallel path conduction (pinholes). A simple electrical model shows this should be true for noise measurements as well as for the tunneling magnetoresistance (TMR) as the resistance-area product (RxA) is reduced. The model suggests that a correlation between TMR and shot noise should exist assuming the presence of pinholes and that shot noise offers a useful experimental monitoring technique. The difficulties of making these measurements related to high frequency 1/f noise are discussed. Noise results are presented for high RxA and low RxA low-resistance samples which, in this particular case, both show the influence of pinhole shunting. (C) 2002 American Institute of Physics.
引用
收藏
页码:682 / 684
页数:3
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