High-rate, room-temperature synthesis of amorphous silicon carbide films from organo-silicon in high-density helicon wave plasma

被引：9

作者：

Ma, Xiao ^{[1
]}

Xu, Dongsheng ^{[2
]}

Ji, Peiyu ^{[3
]}

Jin, Chenggang ^{[3
]}

Lin, James ^{[2
]}

Ding, Yuqiang ^{[1
]}

Xu, Chongying ^{[2
]}

机构：

[1] Jiangnan Univ, Sch Chem & Mat Engn, Wuxi 214122, Jiangsu, Peoples R China

[2] Jiangsu Nata Optoelect Mat Co Ltd, 7F One Lakepoint,9 Cuiwei St, Suzhou 215003, Jiangsu, Peoples R China

[3] Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Jiangsu, Peoples R China

来源：

VACUUM | 2019年 / 164卷

关键词：

Helicon wave plasma; Amorphous SiC films; XPS; Hardness; CHEMICAL-VAPOR-DEPOSITION; OPTICAL-EMISSION SPECTROSCOPY; SICH THIN-FILMS; A-SICH; H FILMS; GROWTH; CVD;

D O I：

10.1016/j.vacuum.2019.03.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, amorphous silicon carbide (alpha-SiC) films were synthesized on 316L stainless steel by low pressure, high density helicon wave plasma (HWP), using tetramethylsilane (TMS) as the single-source precursor which is organometallic compound. The influence of the substrate bias voltage (Vs) on the surface morphology, structure, chemical composition, and mechanical properties of the a-SiC films is investigated. The increase of -V-s from 0 to 200 V causes the removal of organic moieties from the film and results in the formation condition for alpha-SiC. The maximum deposition rate of the coating is up to 250 nm/s, which is related to the high-density (> 10(19) m(-3)) plasma production of HWP [1]. The X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectrometer (FTIR) results imply that the film is mainly composed of SiC. The films deposited at -V-s = 200 V appear to be high-hardness (up to 33.6 GPa) materials with very small surface roughness (similar to 0.5 nm). Considering the easy control of the bias voltage, our work provides a new method for achieving alpha-SiC films with high-yield at room temperature.

引用

页码：355 / 360

页数：6