Architectural Consequences of Radiation Performance in a Flash NAND Device

被引：0

作者：

Hansen, D. L. ^{[1
]}

Hillman, R. ^{[1
]}

Meraz, F. ^{[1
]}

Montoya, J. ^{[1
]}

Williamson, G. ^{[1
]}

机构：

[1] Data Devices Corp, Bohemia, NY 11716 USA

来源：

2017 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2017年

关键词：

SEU; single event upset; heavy ion; error detect and correct; heavy-ion testing; total ionizing dose; MEMORIES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-event effects and total ionizing-dose testing was performed on a flash NAND device. The results are presented here and the consequences for error correction architectures are analyzed taking into account the fact that beginning-of-life flash devices are susceptible to data corruption with no external stress applied. The analysis indicates that many typical error correction architectures may be ineffectual because of the variety of radiation effects.

引用

页码：340 / 345

页数：6

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