Adsorption and incorporation of silicon at GaN(0001) surfaces

被引：57

作者：

Rosa, AL

Neugebauer, J

Northrup, JE

Lee, CD

Feenstra, RM

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

[3] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 11期

关键词：

D O I：

10.1063/1.1452785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the adsorption and incorporation of Si at GaN(0001) surfaces employing density-functional theory and scanning tunneling microscopy (STM). Calculating the surface energy of a large number of structures with various Si concentrations and various III-V ratios, we derive a phase diagram showing the energetically most stable surfaces as a function of the Si and N chemical potentials. Based on these results, we identify the surface reconstructions seen in STM, explain the incorporation mechanism of Si on GaN surfaces, and discuss under which conditions Si acts as an antisurfactant. (C) 2002 American Institute of Physics.

引用

页码：2008 / 2010

页数：3

共 12 条

[11] GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations [J].