Influence of the Substrate and Precursor on the Magnetic and Magneto-transport Properties in Magnetite Films

被引:3
作者
Lima, Enio, Jr. [1 ]
Brito, Giancarlo E. S. [2 ]
Cavelius, Christian [3 ]
Sivakov, Vladimir [3 ]
Shen, Hao [3 ]
Mathur, Sanjay [3 ]
Goya, Gerardo F. [4 ]
机构
[1] Consejo Nacl Invest Cient & Tecn, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, RN, Argentina
[2] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil
[3] Leibniz Inst New Mat, CVD Div, D-66123 Saarbrucken, Germany
[4] Univ Zaragoza, INA, E-50009 Zaragoza, Spain
关键词
Magnetite films; chemical vapor deposition; magnetoresistance; anti-phase boundaries; FE3O4; MAGNETORESISTANCE; MICROSTRUCTURE; DEPOSITION; BEHAVIOR; DOMAINS;
D O I
10.2174/157341312802884544
中图分类号
Q81 [生物工程学(生物技术)]; Q93 [微生物学];
学科分类号
071005 ; 0836 ; 090102 ; 100705 ;
摘要
We have investigated the magnetic and transport properties of nanoscaled Fe3O4 films obtained from Chemical Vapor Deposition (CVD) technique using [(FeFe2III)-Fe-II(OBut)(8)] and [Fe-2(III)(OBut)(6)] precursors. Samples were deposited on different substrates (i.e., MgO (001), MgAl2O4 (001) and Al2O3 (0001)) with thicknesses varying from 50 to 350 nm. Atomic Force Microscopy analysis indicated a granular nature of the samples, irrespective of the synthesis conditions (precursor and deposition temperature, T-pre) and substrate. Despite the similar morphology of the films, magnetic and transport properties were found to depend on the precursor used for deposition. Using [(FeFe2III)-Fe-II(OBut)(8)] as precursor resulted in lower resistivity, higher M-S and a sharper magnetization decrease at the Verwey transition (T-V). The temperature dependence of resistivity was found to depend on the precursor and T-pre. We found that the transport is dominated by the density of antiferromagnetic antiphase boundaries (AF-APB's) when [(FeFe2III)-Fe-II(OBut)(8)] precursor and T-pre = 363 K are used. On the other hand, grain boundary-scattering seems to be the main mechanism when [Fe-2(III)(OBut)(6)] is used. The Magnetoresistance (MR(H)) displayed an approximate linear behavior in the high field regime (H > 796 kA/m), with a maximum value at room-temperature of similar to 2-3 % for H = 1592 kA/m, irrespective from the transport mechanism.
引用
收藏
页码:659 / 668
页数:10
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