Random telegraph signal and 1/f noise in forward-biased single-walled carbon nanotube film-silicon Schottky junctions

被引：12

作者：

An, Yanbin ^{[1
]}

Rao, Hemant ^{[1
]}

Bosman, Gijs ^{[1
]}

Ural, Ant ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 21期

关键词：

SOLAR-CELLS; TRANSPARENT; DEVICES; DIODES;

D O I：

10.1063/1.4719094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic noise of single-walled carbon nanotube (CNT) film-Silicon Schottky junctions under forward bias is experimentally characterized. The superposition of a stable 1/f noise and a temporally unstable Lorentzian noise is observed, along with a random telegraph signal (RTS) in the time domain. The data analysis shows that the Lorentzian noise results from the RTS current fluctuations. The data agree well with theoretical descriptions of noise in Schottky junctions due to carrier trapping and detrapping at interface states. Understanding the noise properties of CNT film-Si junctions is important for the integration of CNT film electrodes into silicon-based devices. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4719094]

引用

页数：4

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