Current limitation in A 3 B 5 nitride light-emitting diodes under forward bias

被引：7

作者：

Prudaev, I. A. ^{[1
]}

Ivonin, I. V. ^{[1
]}

Tolbanov, O. P. ^{[1
]}

机构：

[1] Natl Res Tomsk State Univ, Tomsk, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2012年 / 54卷 / 12期

关键词：

light-emitting diode; gallium nitride; contact resistance; current-voltage characteristic;

D O I：

10.1007/s11182-012-9756-y

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The results of investigation into forward-bias current-voltage characteristics of InGaN/GaN light-emitting diodes (LEDs) in the static and pulsed modes for current densities up to 1000 A/cm2are reported. It is shown that starting from 5-6 V, the voltage-current characteristics are described by a linear dependence at room temperature. The series resistance is in no excess of 1 Omega for the area of diodes S a parts per thousand aEuro parts per thousand 1 mm2 and is determined by the specific contact resistance. It is also found that in the voltage-current characteristic under forward bias, there is a temperature-dependent segment between those of recombination and ohmic currents.

引用

页码：1372 / 1374

页数：3

共 7 条

[1]

BOCHKAREVA NI, 2010, FIZ TEKH POLUPROV, V44, P822

[2] Nonradiative recombination dynamics in InGaN/GaN LED defect system [J].