Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells

被引：89

作者：

Adivarahan, V ^{[1
]}

Chitnis, A

Zhang, JP

Shatalov, M

Yang, JW

Simin, G

Khan, MA

Gaska, R

Shur, MS

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Sensor Elect Technol Inc, Latham, NY 12110 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 25期

关键词：

D O I：

10.1063/1.1425453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ultraviolet light-emitting diode with peak emission wavelength at 340 nm is reported. The active layers of the device were comprised of quaternary AlInGaN/AlInGaN multiple quantum wells, which were deposited over sapphire substrates using a pulsed atomic-layer epitaxy process that allows precise control of the composition and thickness. A comparative study of devices over sapphire and SiC substrates was done to determine the influence of the epilayer design on the performance parameters and the role of substrate absorption. (C) 2001 American Institute of Physics.

引用

页码：4240 / 4242

页数：3

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