Formation of HCNO and HCN in the 193 nm photolysis of H2CCO in the presence of NO

被引：18

作者：

Eshchenko, G ^{[1
]}

Köcher, T ^{[1
]}

Kerst, C ^{[1
]}

Temps, F ^{[1
]}

机构：

[1] Univ Kiel, Inst Phys Chem, D-24098 Kiel, Germany

来源：

CHEMICAL PHYSICS LETTERS | 2002年 / 356卷 / 1-2期

关键词：

D O I：

10.1016/S0009-2614(02)00387-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The products obtained from the ArF laser photolysis of H2CCO in the presence of a large excess of NO at T = 298 K and p = 3.5 mbar in He bath gas were investigated in a tubular flow reactor by time-resolved mass spectrometry. The main reaction products observed in the presence of NO were HCNO and HCN. The measured yields, F-HCNO = 0.78 +/- 0.18 and Gamma(HCN) = 0.19 +/- 0.04, respectively, were attributed to the contributions of the reactions CH2 + NO --> HCNO + H (1a) CH2 + NO --> HCN + OH (1b) and HCCO + NO --> HCNO + CO (2a) (HCCO + NO --> HCN + CO2 (2b) The time-resolved measurements are compared to results of preceding end product analyses by Fourier transform IR spectroscopy. (C) 2002 Published by Elsevier Science B.V.

引用

页码：181 / 187

页数：7

共 35 条

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