Effect of Silane flow rate on microstructure of Silicon films deposited by HWCVD

被引：5

作者：

Gogoi, Purabi ^{[1
]}

Jha, Himanshu S. ^{[1
]}

Agarwal, Pratirna ^{[1
]}

机构：

[1] Indian Inst Technol Guwahah, Dept Phys, Gauhati 781039, India

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2012年 / 358卷 / 17期

关键词：

HWCVD; Microstructure; Nanocrystalline silicon; CHEMICAL-VAPOR-DEPOSITION; AMORPHOUS-SILICON; BAND-GAP;

D O I：

10.1016/j.jnoncrysol.2011.12.095

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated silicon films ranging from pure amorphous to those containing small crystallites in large crystalline fraction are prepared using the HWCVD technique without using any hydrogen dilution which is supposed to be necessary for the deposition of nanocrystalline Si films. The only parameter that is varied is Silane flow rate. The deposition rate ranges from 6-27 angstrom/s. The band gap of the films (1.8-2.0 eV) is high compared to the regular films, which is attributed to the improved short and medium range order as well as the presence of low density amorphous tissues in the grain boundary regions. The films show improved stability under long term light exposure due to more ordered structure and presence of hydrogen mostly as strong Si H bonds. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1990 / 1994

页数：5

共 7 条

[1] Heterogeneity in microcrystalline-transition state:: Origin of Si-nucleation and microcrystallization at higher rf power from Ar-diluted SiH4 plasma [J].

Das, D ;

Jana, M ;

Barua, AK .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) :3041-3048

[2] Characterization of the Si:H network during transformation from amorphous to micro- and nanocrystalline structures [J].

Das, Debajyoti ;

Bhattacharya, Koyel .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (10)

[3] Studies on grain boundaries in nanocrystalline silicon grown by hot-wire CVD [J].

Fonrodona, M ;

Soler, D ;

Asensi, J ;

Bertomeu, J ;

Andreu, J .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 299 :14-19

[4] Variation of microstructure and transport properties with filament temperature of HWCVD prepared silicon thin films [J].

Gogoi, Purabi ;

Jha, Himanshu S. ;

Agarwal, Pratima .

THIN SOLID FILMS, 2011, 519 (14) :4506-4510

[5] High band gap nanocrystallite embedded amorphous silicon prepared by hotwire chemical vapour deposition [J].

Gogoi, Purabi ;

Jha, Himanshu S. ;

Agarwal, Pratima .

THIN SOLID FILMS, 2010, 518 (23) :6818-6828

[6] Microstructure of polysilicon films grown by catalytic chemical vapor deposition method [J].

He, AQ ;

Heya, A ;

Otsuka, N ;

Matsumura, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (01) :92-93

[7] On the influence of short and medium range order on the material band gap in hydrogenated amorphous silicon [J].

Mahan, AH ;

Biswas, R ;

Gedvilas, LM ;

Williamson, DL ;

Pan, BC .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (07) :3818-3826

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