Absorption coefficient for the intraband transitions in quantum dot materials

被引：27
|
作者：
Luque, Antonio [1 ]
Marti, Antonio [1 ]
Mellor, Alex [1 ]
Marron, D. Fuertes [1 ]
Tobias, I. [1 ]
Antolin, E. [1 ]
机构：
[1] Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain
来源：
PROGRESS IN PHOTOVOLTAICS | 2013年 / 21卷 / 04期
关键词：
intermediate band solar cell; absorption; quantum dot; quantum calculations;
D O I：
10.1002/pip.1250
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k center dot p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band. Copyright (c) 2012 John Wiley & Sons, Ltd.
引用
收藏
页码：658 / 667
页数：10
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