Alternately Controlled Optical Pixel Sensor System Using Amorphous Silicon Thin-Film Transistors

被引:5
作者
Lin, Chih-Lung [1 ,2 ]
Wu, Chia-En [1 ]
Lee, Chia-Lun [1 ]
Chen, Fu-Hsing [1 ]
Lin, Yu-Sheng [1 ]
Wu, Wan-Lin [3 ]
Yu, Jian-Shen [4 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
[3] Gemtek Technol Co Ltd, Hsinchu 303, Taiwan
[4] AU Optron Corp, AUO Technol Ctr, Hsinchu 30078, Taiwan
关键词
Hydrogenated amorphous silicon (a-Si:H); integrated sensor; optical pixel sensor; thin-film transistors (TFTs); THRESHOLD-VOLTAGE SHIFT; GATE DRIVER CIRCUIT; TOUCH; TFT; DESIGN;
D O I
10.1109/TIE.2018.2880718
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents an optical pixel sensor system that uses hydrogenated amorphous silicon (a-Si:H) photo thin-film transistors (TFTs) for innovating the user interface of displays with optical input functions. The proposed optical pixel sensor applies photo TFTs that are combined with one primary color filter (red, green, or blue) to determine the input signal to the optical sensor. Other photo TFTs covered with filters of other colors are utilized to provide compensating photocurrents for achieving a robust optical input function with a high signal-to-noise ratio under intense ambient white light. To improve the lifetime of the sensor and the degradation of photo TFTs under constant drain-to-source voltage (V-DS) bias stress, an alternately controlled sensing structure is proposed to reduce the effective stress time of the photo TFTs. The optical characteristics and the degradation of a-Si:H photo TFTs under V-DS stress with different duty ratios are investigated to verify the effect of reduced stress time on photo TFTs. Measurements further reveal that the proposed optical sensor achieves a significant initial difference in output voltages under high-intensity ambient white light of 13 230 lx, and that the difference remains high after 408 h of long-term operation at 70 degrees C, demonstrating the feasibility of the alternately controlled sensing structure and the long-term reliability of the sensor.
引用
收藏
页码:7366 / 7375
页数:10
相关论文
共 28 条
  • [1] Abileah A., 2004, SID S DIG TECH PAPER, V35, P1544, DOI [10.1889/1.1821371, DOI 10.1889/1.1821371]
  • [2] LED backlight driving system for large-scale LCD panels
    Chiu, Huang-Jen
    Cheng, Shih-Jen
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2007, 54 (05) : 2751 - 2760
  • [3] Design of an RGB LED Backlight Circuit for Liquid Crystal Display Panels
    Chiu, Huang-Jen
    Lo, Yu-Kang
    Lee, Ting-Peng
    Mou, Shann-Chyi
    Huang, Hsiu-Ming
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2009, 56 (07) : 2793 - 2795
  • [4] Symmetric Current-Balancing Circuit for LED Backlight With Dimming
    Choi, Sungjin
    Kim, Taehoon
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2012, 59 (04) : 1698 - 1707
  • [5] den Boer W, 2012, U.S. Patent, Patent No. [8 289 429 B2, 8289429]
  • [6] Integrated a-Si: H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses
    Hu, Zhijin
    Liao, Congwei
    Li, Wenjie
    Zeng, Limei
    Lee, Chang-Yeh
    Zhang, Shengdong
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (12) : 4044 - 4050
  • [7] Kung C.-P., 2011, SID S DIG TECH PAPER, V42, P1822, DOI DOI 10.1889/1.3621253
  • [8] A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED
    Lee, JH
    Kim, JH
    Han, MK
    [J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26 (12) : 897 - 899
  • [9] Pretest Gap Mura on TFT LCDs Using the Optical Interference Pattern Sensing Method and Neural Network Classification
    Li, Tung-Yen
    Tsai, Jang-Zern
    Chang, Rong-Seng
    Ho, Li-Wei
    Yang, Ching-Fu
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2013, 60 (09) : 3976 - 3982
  • [10] High-Power-Factor Single-Stage LCC Resonant Inverter for Liquid Crystal Display Backlight
    Li, Zhe
    Park, Chun-Yoon
    Kwon, Jung-Min
    Kwon, Bong-Hwan
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2011, 58 (03) : 1008 - 1015