High Drain Current Density E-Mode Al2O3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit (4 x 108 V2Ω-1cm-2)

被引：62
作者：
Freedsman, Joseph Jesudass [1 ]
Kubo, Toshiharu [1 ]
Egawa, Takashi [1 ]
机构：
[1] Nagoya Inst Technol, Res Ctr NanoDevice & Syst, Nagoya, Aichi 4668555, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 10期
关键词：
AlGaN/GaN; breakdown voltage; figure of merit (FOM); high drain current denstiy; high-kappa Al2O3; subthreshold slope; ALGAN/GAN; VOLTAGE; PERFORMANCE; CHARGE; LAYER;
D O I：
10.1109/TED.2013.2276437
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we report on the enhancement-mode (E-mode) Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si. The E-mode operation is due to the negative charges in the atomic layer deposited Al2O3 layer. The unrecessed E-mode MOS-HEMTs exhibit high drain current density (>550 mA/mm) with a low specific ON-state resistance (R-ON,R-sp) of 0.7 m Omega.cm(2). A low gate leakage current showed enhancements in the subthreshold characteristics such as I-ON/I-OFF ratio similar to 10(8) and subthreshold slope of 75 mV/decade. This E-mode device showed good retention characteristics of threshold voltage upto 10(5) s. Furthermore, the E-mode MOS-HEMT exhibits an OFF-state breakdown voltage of 532 V for short gate-to-drain distance (L-gd = 4 mu m) that records a high power device figure of merit (FOM = BV2/R-ON,R-sp) value of 4x10(8) V-2 Omega(-1)cm(-2).
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页码：3079 / 3083
页数：5
相关论文
共 21 条
  • [1] [Anonymous], P IEEE INT C COMP CO
  • [2] Normally-off AlGaN/GaN power tunnel-junction FETs
    Chen, Hongwei
    Yuan, Li
    Zhou, Qi
    Zhou, Chunhua
    Chen, Kevin J.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4): : 871 - 874
  • [3] Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate
    Christy, Dennis
    Egawa, Takashi
    Yano, Yoshiki
    Tokunaga, Hiroki
    Shimamura, Hayato
    Yamaoka, Yuya
    Ubukata, Akinori
    Tabuchi, Toshiya
    Matsumoto, Koh
    [J]. APPLIED PHYSICS EXPRESS, 2013, 6 (02)
  • [4] Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs
    Chung, Jinwook W.
    Roberts, John C.
    Piner, Edwin L.
    Palacios, Tomas
    [J]. IEEE ELECTRON DEVICE LETTERS, 2008, 29 (11) : 1196 - 1198
  • [5] Derluyn J., 2009, IEDM, P157
  • [6] Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers
    Freedsman, Joseph J.
    Kubo, Toshiharu
    Egawa, Takashi
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (01)
  • [7] Proposal and simulated results of a normally off AlGaN/GaN HFET structure with a charged floating gate
    Hasegawa, Fumio
    Kambayashi, Hiroshi
    Li, Jiang
    Ikeda, Nariaki
    Nomura, Takehiko
    Kato, Sadahiro
    Yoshida, Seiko
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S940 - S943
  • [8] Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High-k Gate Dielectrics
    Kanamura, Masahito
    Ohki, Toshihiro
    Kikkawa, Toshihide
    Imanishi, Kenji
    Imada, Tadahiro
    Yamada, Atsushi
    Hara, Naoki
    [J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (03) : 189 - 191
  • [9] Effects of TMAH Treatment on Device Performance of Normally Off Al2O3/GaN MOSFET
    Kim, Ki-Won
    Jung, Sung-Dal
    Kim, Dong-Seok
    Kang, Hee-Sung
    Im, Ki-Sik
    Oh, Jae-Joon
    Ha, Jong-Bong
    Shin, Jai-Kwang
    Lee, Jung-Hee
    [J]. IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) : 1376 - 1378
  • [10] Atomic Layer Deposition of SiO2 for AlGaN/GaN MOS-HFETs
    Kirkpatrick, Casey J.
    Lee, Bongmook
    Suri, Rahul
    Yang, Xiangyu
    Misra, Veena
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (09) : 1240 - 1242
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