High Drain Current Density E-Mode Al2O3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit (4 x 108 V2Ω-1cm-2)

被引：62

作者：

Freedsman, Joseph Jesudass ^{[1
]}

Kubo, Toshiharu ^{[1
]}

Egawa, Takashi ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr NanoDevice & Syst, Nagoya, Aichi 4668555, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 10期

关键词：

AlGaN/GaN; breakdown voltage; figure of merit (FOM); high drain current denstiy; high-kappa Al2O3; subthreshold slope; ALGAN/GAN; VOLTAGE; PERFORMANCE; CHARGE; LAYER;

D O I：

10.1109/TED.2013.2276437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report on the enhancement-mode (E-mode) Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOS-HEMTs) on Si. The E-mode operation is due to the negative charges in the atomic layer deposited Al2O3 layer. The unrecessed E-mode MOS-HEMTs exhibit high drain current density (>550 mA/mm) with a low specific ON-state resistance (R-ON,R-sp) of 0.7 m Omega.cm(2). A low gate leakage current showed enhancements in the subthreshold characteristics such as I-ON/I-OFF ratio similar to 10(8) and subthreshold slope of 75 mV/decade. This E-mode device showed good retention characteristics of threshold voltage upto 10(5) s. Furthermore, the E-mode MOS-HEMT exhibits an OFF-state breakdown voltage of 532 V for short gate-to-drain distance (L-gd = 4 mu m) that records a high power device figure of merit (FOM = BV2/R-ON,R-sp) value of 4x10(8) V-2 Omega(-1)cm(-2).

引用

页码：3079 / 3083

页数：5

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