Metamorphic InAsSb/AlInAsSb heterostructures for optoelectronic applications

被引：31

作者：

Belenky, Gregory ^{[1
]}

Wang, Ding ^{[1
]}

Lin, Youxi ^{[1
]}

Donetsky, Dmitry ^{[1
]}

Kipshidze, Gela ^{[1
]}

Shterengas, Leon ^{[1
]}

Westerfeld, David ^{[1
]}

Sarney, Wendy L. ^{[2
]}

Svensson, Stefan P. ^{[2
]}

机构：

[1] SUNY Stony Brook, Dept ECE, Stony Brook, NY 11794 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 11期

基金：

美国国家科学基金会;

关键词：

DEVICES;

D O I：

10.1063/1.4796181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metamorphic heterostructures containing bulk InAs1-xSbx layers and AlInAsSb barriers were grown on GaSb substrates. The lattice mismatch (up to 2.1%) between the GaSb substrates and the InAsSb layers was accommodated by the growth of GaInSb linearly graded buffers. The 1 mu m thick InAsSb0.44 layer with an absorption edge above 9 mu m exhibited an in-plane residual strain of about 0.08%. InAs1-xSbx structures with x = 0.2 and x = 0.44 operated as light emitting diodes at 80K demonstrated output powers of 90 mu W and 8 mu W at 5 mu m and 8 mu m, respectively. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4796181]

引用

页数：4

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