Pressure collapse of Kondo gap in Kondo compound CeRhSb

被引：15

作者：

Uwatoko, Y

Ishii, T

Oomi, G

Takahasi, H

Mori, N

Thompson, JD

Shero, JL

Madru, D

Fisk, Z

机构：

[1] KUMAMOTO UNIV, FAC GEN EDUC, DEPT PHYS, KUMAMOTO 860, JAPAN

[2] UNIV TOKYO, ISSP, TOKYO 106, JAPAN

[3] LOS ALAMOS NATL LAB, LOS ALAMOS, NM 87544 USA

[4] FLORIDA STATE UNIV, TALLAHASSEE, FL 32306 USA

[5] NATL HIGH MAGNET FIELD LAB, TALLAHASSEE, FL 32306 USA

[6] OAK RIDGE NATL LAB, OAK RIDGE, TN 37831 USA

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1996年 / 65卷 / 01期

关键词：

Kondo gap; pressure effect; electrical resistivity; CeRhSb;

D O I：

10.1143/JPSJ.65.27

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of pressure on the electrical resistivity of CeRhSb has been studied up to 80 kbar in order to elucidate the electronic Properties of CeRhSb at low temperature. It is found that the Kondo temperature increases with pressure and gap is quenched at P = 80 kbar, showing a maximum around 30 kbar.

引用

页码：27 / 29

页数：3

共 8 条

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