Lateral templating for guided self-organization of sputter morphologies

被引：63
作者：
Cuenat, A
George, HB
Chang, KC
Blakely, JM
Aziz, MJ [1 ]
机构：
[1] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Cornell Univ, Ctr Mat Sci, Ithaca, NY 14853 USA
来源：
ADVANCED MATERIALS | 2005年 / 17卷 / 23期
关键词：
D O I：
10.1002/adma.200500717
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Spontaneously emerging topographic patterns on a Si(100) substrate are guided to develop long-range order (see Figure) by using prefabricated boundaries on the area on which they organize. The density of topological defects, such as dislocations, is minimized when the ratio of the spacing between boundaries to the naturally arising spatial period is near an integer value.
引用
收藏
页码：2845 / +
页数：6
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共 39 条
  • [1] Controlling local disorder in self-assembled monolayers by patterning the topography of their metallic supports
    Aizenberg, J
    Black, AJ
    Whitesides, GM
    [J]. NATURE, 1998, 394 (6696) : 868 - 871
  • [2] Preface to viewpoint set on: materials under driving forces
    Bellon, P
    Averback, RS
    [J]. SCRIPTA MATERIALIA, 2003, 49 (10) : 921 - 925
  • [3] THEORY OF RIPPLE TOPOGRAPHY INDUCED BY ION-BOMBARDMENT
    BRADLEY, RM
    HARPER, JME
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2390 - 2395
  • [4] Ripple topography development on ion bombarded Si
    Carter, G
    Vishnyakov, V
    Nobes, MJ
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 115 (1-4) : 440 - 445
  • [5] Nanostructure engineering by templated self-assembly of block copolymers
    Cheng, JY
    Mayes, AM
    Ross, CA
    [J]. NATURE MATERIALS, 2004, 3 (11) : 823 - 828
  • [6] PATTERN-FORMATION OUTSIDE OF EQUILIBRIUM
    CROSS, MC
    HOHENBERG, PC
    [J]. REVIEWS OF MODERN PHYSICS, 1993, 65 (03) : 851 - 1112
  • [7] STOCHASTIC-MODEL FOR SURFACE EROSION VIA ION SPUTTERING - DYNAMICAL EVOLUTION FROM RIPPLE MORPHOLOGY TO ROUGH MORPHOLOGY
    CUERNO, R
    MAKSE, HA
    TOMASSONE, S
    HARRINGTON, ST
    STANLEY, HE
    [J]. PHYSICAL REVIEW LETTERS, 1995, 75 (24) : 4464 - 4467
  • [8] Spontaneous pattern formation on ion bombarded Si(001)
    Erlebacher, J
    Aziz, MJ
    Chason, E
    Sinclair, MB
    Floro, JA
    [J]. PHYSICAL REVIEW LETTERS, 1999, 82 (11) : 2330 - 2333
  • [9] Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001)
    Erlebacher, J
    Aziz, MJ
    Chason, E
    Sinclair, MB
    Floro, JA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (01): : 115 - 120
  • [10] Formation of ordered nanoscale semiconductor dots by ion sputtering
    Facsko, S
    Dekorsy, T
    Koerdt, C
    Trappe, C
    Kurz, H
    Vogt, A
    Hartnagel, HL
    [J]. SCIENCE, 1999, 285 (5433) : 1551 - 1553
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