A simple nickel bis(dithiolene) complex as an excellent n-type molecular semiconductor for field-effect transistors

被引：22
作者：
Qu, Li [3 ,4 ]
Guo, Yunlong [1 ,2 ]
Luo, Hao [1 ,2 ]
Zhong, Cheng [3 ,4 ]
Yu, Gui [1 ,2 ]
Liu, Yunqi [1 ,2 ]
Qin, Jingui [3 ,4 ]
机构：
[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, CAS Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
[3] Wuhan Univ, Dept Chem, Wuhan 430072, Peoples R China
[4] Wuhan Univ, Hubei Key Lab Organ & Polymer Optoelect Mat, Wuhan 430072, Peoples R China
来源：
CHEMICAL COMMUNICATIONS | 2012年 / 48卷 / 80期
基金：
中国国家自然科学基金;
关键词：
HIGH-ELECTRON-MOBILITY; ORGANIC SEMICONDUCTORS; TRANSPORT; STABILITY; RING;
D O I：
10.1039/c2cc33445c
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A simple nickel bis(dithiolene) complex has been developed as an excellent n-type molecular semiconductor for FETs, with an electron mobility of 0.11 cm(2) V-1 s(-1) and an on/off ratio of 2 x 10(6) despite its small pi-conjugated system. Good FET stability in ambient conditions has also been observed.
引用
收藏
页码：9965 / 9967
页数：3
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