A simple nickel bis(dithiolene) complex as an excellent n-type molecular semiconductor for field-effect transistors

被引：22

作者：

Qu, Li ^{[3
,4
]}

Guo, Yunlong ^{[1
,2
]}

Luo, Hao ^{[1
,2
]}

Zhong, Cheng ^{[3
,4
]}

Yu, Gui ^{[1
,2
]}

Liu, Yunqi ^{[1
,2
]}

Qin, Jingui ^{[3
,4
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, CAS Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China

[3] Wuhan Univ, Dept Chem, Wuhan 430072, Peoples R China

[4] Wuhan Univ, Hubei Key Lab Organ & Polymer Optoelect Mat, Wuhan 430072, Peoples R China

来源：

CHEMICAL COMMUNICATIONS | 2012年 / 48卷 / 80期

基金：

中国国家自然科学基金;

关键词：

HIGH-ELECTRON-MOBILITY; ORGANIC SEMICONDUCTORS; TRANSPORT; STABILITY; RING;

D O I：

10.1039/c2cc33445c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A simple nickel bis(dithiolene) complex has been developed as an excellent n-type molecular semiconductor for FETs, with an electron mobility of 0.11 cm(2) V-1 s(-1) and an on/off ratio of 2 x 10(6) despite its small pi-conjugated system. Good FET stability in ambient conditions has also been observed.

引用

页码：9965 / 9967

页数：3

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