Modeling of Structure Effect for Ferroelectric Capacitor Based on Poly(vinylidene fluoride-trifluoroethylene) Ultrathin Films

被引:8
作者
Li, Long [1 ,2 ]
Zhang, Xiuli [1 ,3 ]
Chen, Hongzhen [3 ]
Sun, Xiaohui [1 ]
Yuan, Haidong [3 ]
Xu, Haisheng [4 ,5 ]
机构
[1] Shanghai Univ Engn Sci, Sch Math Phys & Stat, Shanghai 201620, Peoples R China
[2] Shanghai Univ Engn Sci, Sch Mat Engn, Shanghai 201620, Peoples R China
[3] Chinese Univ Hong Kong, Dept Mech & Automat Engn, Hong Kong, Hong Kong, Peoples R China
[4] East China Univ Sci & Technol, Dept Phys, Shanghai 200237, Peoples R China
[5] Kunshan Hisense Elect Co Ltd, Kunshan 215300, Peoples R China
基金
中国国家自然科学基金;
关键词
P(VDF-TrFE); polarization; depolarization field; fatigue; DEPOLARIZATION-FIELD; THICKNESS DEPENDENCE; NONVOLATILE MEMORIES; THIN-FILM; POLYMER; POLARIZATION; COPOLYMERS; DEVICES; SENSORS;
D O I
10.3390/polym10010006
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
The characteristics of ferroelectric capacitors with poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different structures of cell electrodes. It is suggested that the effect of electrode structures could induce changes of performance. Remarkably, cells with line electrodes display a better polarization and fatigue resistance than those with flat electrodes. For P(VDF-TrFE) ultrathin films with different electrode structures, the models of charge compensation mechanism for depolarization field and domain fatigue decomposition are used to explain the effect of electrode structure. Furthermore, the driving voltage based on normal speed-functionality is designed, and the testing results show that the line electrode structure could induce a robust switching, which is determined by the free charges concentration in active layer. These findings provide an effective route to design the optimum structure for a ferroelectric capacitor based on P(VDF-TrFE) copolymer ultrathin film.
引用
收藏
页数:11
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