The Opposite Anisotropic Piezoresistive Effect of ReS2

被引:75
作者
An, Chunhua [1 ]
Xu, Zhihao [1 ]
Shen, Wanfu [1 ]
Zhang, Rongjie [1 ]
Sun, Zhaoyang [1 ]
Tang, Shuijing [2 ,3 ]
Xiao, Yun-Feng [2 ,3 ]
Zhang, Daihua [1 ]
Sun, Dong [4 ]
Hu, Xiaodong [1 ]
Hu, Chunguang [1 ]
Yang, Lei [5 ,6 ]
Liu, Jing [1 ]
机构
[1] Tianjin Univ, State Key Lab Precis Measuring Technol & Instrume, Sch Precis Instruments & Optoelect Engn, 92 Weijin Rd, Tianjin 300072, Peoples R China
[2] Peking Univ, Collaborat Innovat Ctr Quantum Matter, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[3] Peking Univ, Collaborat Innovat Ctr Quantum Matter, Sch Phys, Beijing 100871, Peoples R China
[4] Peking Univ, Sch Phys, Int Ctr Quantum Mat, 5 Yiheyuan Rd, Beijing 100871, Peoples R China
[5] Max Planck Inst Eisenforsch GmbH, D-40237 Dusseldorf, Germany
[6] Kanazawa Univ, WPI Nano Life Sci Inst WPI NanoLSI, Kakuma Machi, Kanazawa, Ishikawa 9201192, Japan
基金
美国国家科学基金会;
关键词
ReS2; anisotropy; piezoresistive effect; reflectance difference microscopy; reflective difference spectroscopy; FEW-LAYER; ELECTRICAL-PROPERTIES; INPLANE ANISOTROPY; BLACK PHOSPHORUS; STRAIN SENSOR; MONOLAYER; SEMICONDUCTOR; PIEZOELECTRICITY; PROPERTY; BANDGAP;
D O I
10.1021/acsnano.8b09161
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Mechanical strain induced changes in the electronic properties of two-dimensional (2D) materials is of great interest for both fundamental studies and practical applications. The anisotropic 2D materials may further exhibit different electronic changes when the strain is applied along different crystalline axes. The resulting anisotropic piezoresistive phenomenon not only reveals distinct lattice-electron interaction along different principle axes in low-dimensional materials but also can accurately sense/recognize multidimensional strain signals for the development of strain sensors, electronic skin, human-machine interfaces, etc. In this work, we systematically studied the piezoresistive effect of an anisotropic 2D material of rhenium disulfide (ReS2), which has large anisotropic ratio. The measurement of ReS2 piezoresistance was experimentally performed on the devices fabricated on a flexible substrate with electrical channels made along the two principle axes, which were identified noninvasively by the reflectance difference microscopy developed in our lab. The result indicated that ReS2 had completely opposite (positive and negative) piezoresistance along two principle axes, which differed from any previously reported anisotropic piezoresistive effect in other 2D materials. We attributed the opposite anisotropic piezoresistive effect of ReS2 to the strain-induced broadening and narrowing of the bandgap along two principle axes, respectively, which was demonstrated by both reflectance difference spectroscopy and theoretical calculations.
引用
收藏
页码:3310 / 3319
页数:10
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