Enhanced electron density in two Si δ-doped Al0.33Ga0.67As/GaAs heterojunctions

被引：7

作者：

Sfaxi, L ^{[1
]}

Bouzaïene, L ^{[1
]}

Maaref, H ^{[1
]}

机构：

[1] Fac Sci Monastir, Dept Phys, Lab Phys Semicond, Monastir 5000, Tunisia

来源：

MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 08期

关键词：

Hall measurements; quantum well; DX center effect;

D O I：

10.1016/S0026-2692(98)00167-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the electronic properties of the delta-doped Al0.33Ga0.67As/GaAs heterojunction such as the electron density. We have also examined the case where the delta- doping is placed in a thin AlxGa1-xAs quantum well embedded in the Al0.33Ga0.67As barrier. This is intended to reduce the DX centers effects. In this context, we have grown a series of silicon delta-doped Al0.33Ga0.67As/GaAs heterostructures having various alloy compositions in the AlxGa1-xAs quantum well (x(Al)(well)). Hall measurements were performed on these samples in the temperature range 4-300 K. A self-consistent analysis (Schrodinger and Poisson equations) is made on these silicon delta-doping systems. Moreover, a comparison between the theoretical and experimental results shows an agreement between them. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：769 / 772

页数：4

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