Observation of reentrant 2D to 3D morphology transition in highly strained epitaxy: InAs on GaAs

被引：152

作者：

Heitz, R ^{[1
]}

Ramachandran, TR ^{[1
]}

Kalburge, A ^{[1
]}

Xie, Q ^{[1
]}

Mukhametzhanov, I ^{[1
]}

Chen, P ^{[1
]}

Madhukar, A ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.78.4071

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The two-dimensional (2D) to three-dimensional (3D) transition in highly strained growth of InAs of GaAs(001) is investigated using in situ scanning tunneling microscopy and photoluminescence spectroscopy. Remarkably, InAs structural features up to five monolayers (ML) high appear at similar to 1.25 ML: disappear, and reappear prior to the onset of well-developed 3D islands at 1.57 ML, thus manifesting a hitherto unrecognized reentrant behavior in the formation of 3D islands. The results provide new insights into the long-standing problem of the kinetic aspects of 2D to 3D morphology change not embodied in the widely encountered Stranski-Krastanow growth mode.

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页码：4071 / 4074

页数：4

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