Single-electron levels of InAs/GaAs quantum dot: Comparison with capacitance spectroscopy

被引：8
作者：
Filikhin, I
Deyneka, E
Vlahovic, B
机构：
[1] N Carolina Agr & Tech State Univ, Ctr Adv Mat & Smart Struct, Greensboro, NC 27411 USA
[2] N Carolina Cent Univ, Dept Phys, Durham, NC 27707 USA
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 31卷 / 01期
基金：
美国国家航空航天局;
关键词：
quantum dots; electron states; single-electron tunneling;
D O I：
10.1016/j.physe.2005.10.002
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A 3D model of semiconductor quantum dot based on the single subband approach with energy dependence of the electron effective mass is applied to calculate the single-electron spectra of InAs/GaAs quantum dots. The results are in good agreement with the capacitance-voltage measurements by Miller et al. [Phys. Rev. B 56 (1997) 6764]. Non-parabolic contributions to the electron effective mass and the energy of states are evaluated. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：99 / 102
页数：4
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