Macro van der Waals p-n heterojunction based on SnSe and SnSe2

被引：19

作者：

Zhong, Yujia ^{[1
]}

Zhang, Li ^{[2
]}

Chen, Wenduo ^{[1
]}

Zhu, Hongwei ^{[1
]}

机构：

[1] Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China

来源：

NANOTECHNOLOGY | 2020年 / 31卷 / 38期

关键词：

van der Waals heterojunction; tin selenide; tin diselenide; band alignment; photodetectors; THIN-FILMS; GROWTH; GRAPHENE;

D O I：

10.1088/1361-6528/ab9a77

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Van der Waals (vdW) heterojunctions based on two-dimensional materials have attracted great attention in emerging photoelectronics. However, the low-efficiency growth of single crystals significantly limits the practical applications of vdW heterojunctions. Here, we report a macro SnSe/SnSe(2)heterojunction assembled by conformally transferring in-plane p-type SnSe on n-type SnSe(2)synthesized by chemical vapor deposition. With well-matched band alignments, the SnSe/SnSe(2)vdW photodetector exhibits dramatically enhanced performance with a responsivity of 17.5 mA W(-1)and a response time of 17 ms, comparing with the sole SnSe or SnSe(2)based photodetector.

引用

页数：6

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