Synthesis and high-performance thermoelectric properties of beta-Zn4Sb3 nanowires

被引：11
作者：
Liu, Yu-Biao [1 ]
Zhou, Shao-Min [1 ]
Yuan, Xian-You [2 ]
Lou, Shi-Yun [1 ]
Gao, Tao [1 ]
Shi, Xiao-Jing [1 ]
Wu, Xiao-Ping [1 ]
机构：
[1] Henan Univ, Minist Educ, Key Lab Special Funct Mat, Kaifeng 475004, Peoples R China
[2] Hunan Univ Sci & Engn, Dept Biol & Chem, Yongzhou 425100, Hunan, Peoples R China
来源：
MATERIALS LETTERS | 2012年 / 84卷
关键词：
Energy storage and conversion; Nanocrystalline materials; Thermoelectrics; FIGURE;
D O I：
10.1016/j.matlet.2012.06.046
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Based on physical vapor deposition (PVD) in the absence of any template and catalyst, beta-Zn4Sb3 nanowires (NWs) have firstly been synthesized under controlled conditions. Composition, morphology, structure, and thermoelectric property of the fabricated beta-Zn4Sb3 products are characterized by different instruments. Moreover, room temperature Hall effects are conducted to study the electric transport property of the as-annealed beta-Zn4Sb3 NWs and synthesized powders. In particular, the as-obtained results reveal that the as-annealed beta-Zn4Sb3 NWs possess a high dimensionless figure of merit (ZT, 1.59) at 675 K. It is much higher than that of all bulk beta-Zn4Sb3 materials (no more than 1.3), which has potential applications for thermoelectric nanodevices. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：116 / 119
页数：4
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