Improving Forward Current Characteristics of Diode by X-ray Irradiation

被引：2
作者：
Niemcharoen, Surasak [1 ]
Srithanachai, Itsara [1 ]
Ueamanapong, Surada [1 ]
Poyai, Amporn [2 ]
机构：
[1] King Mongkuts Inst Technol, Dept Elect, Fac Engn, Charongkrung Rd, Bangkok 10520, Thailand
[2] Thai Microelectron Ctr, Chandigarh, India
来源：
MATERIALS SCIENCE AND INFORMATION TECHNOLOGY, PTS 1-8 | 2012年 / 433-440卷
关键词：
Forward current; X-ray irradiation; Series resistance; DOSIMETER;
D O I：
10.4028/www.scientific.net/AMR.433-440.6713
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
These papers investigates the effect of X-ray on forward current characteristics of diode. The forward current of diode after X-ray irradiation energy 40 keV at the exposure time ranging 5, 10 second was increased, while 15 and 20 second was decreased. X-ray causes changing of the electrical characteristics of diode. Series resistance is the main factor for analyze on forward current characteristics. From the results, X-ray can improve performance of diode at the exposure time for 5 and 10 second.
引用
收藏
页码：6713 / +
页数：2
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共 5 条
[1]   Evaluation of a low-cost commercial mosfet as radiation dosimeter [J].
Asensio, LJ ;
Carvajal, MA ;
López-Villanueva, JA ;
Vilches, M ;
Lallena, AM ;
Palma, AJ .
SENSORS AND ACTUATORS A-PHYSICAL, 2006, 125 (02) :288-295
[2]   Inorganic EPR dosimeter for medical radiology [J].
Bogushevich, SE ;
Ugolev, II .
APPLIED RADIATION AND ISOTOPES, 2000, 52 (05) :1217-1219
[3]   High efficiency optical coupler for a small photo acceptance area photodiode used in the high speed plastic optical fiber communication [J].
Matsumoto, Y ;
Nakazono, A ;
Kitahara, T ;
Koike, Y .
SENSORS AND ACTUATORS A-PHYSICAL, 2002, 97-8 :318-322
[4]   Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon [J].
Simeon, E ;
Claeys, C ;
Loo, R ;
De Gryse, O ;
Clauws, P ;
Job, R ;
Ulyashin, AG ;
Fahrner, W .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 102 (1-3) :207-212
[5]   ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES [J].
VANHELLEMONT, J ;
SIMOEN, E ;
CLAEYS, C ;
KANIAVA, A ;
GAUBAS, E ;
BOSMAN, G ;
JOHLANDER, B ;
ADAMS, L ;
CLAUWS, P .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) :1924-1931
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