Microscopic modelling of semiconductor-based infrared photodetectors: a weighted Monte Carlo approach

被引：3

作者：

Portolan, S

Iotti, RC

Rossi, F

机构：

[1] Politecn Torino, Ist Nazl Fis Mat, I-10129 Turin, Italy

[2] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期

关键词：

D O I：

10.1088/0268-1242/19/4/039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A microscopic investigation of hot-carrier vertical transport phenomena in semiconductor-based infrared photodetectors is presented. In order to overcome the intrinsic limitations of the conventional Monte Carlo method in describing the electro-optical response of such quantum devices-i.e. huge photocurrent fluctuations-a novel weighted Monte Carlo scheme is proposed. As shown by our simulated experiments, this new Monte Carlo strategy, particularly suited for the analysis of steady-state conditions, allows for a fully three-dimensional analysis of the basic microscopic processes governing new-generation infrared photodetectors.

引用

页码：S107 / S109

页数：3

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