High Performance Self-Powered UV Photodetector Based on β-Ga2O3 Nanowire/CH3NH3PbI3 Heterostructure

Here, we have designed a novel perovskite-based self-powered deep ultraviolet (DUV) photodetector using hybrid heterostructure of beta-Ga2O3 nanowire (NW)/CH3NH3PbI3 (named as D1) and beta-Ga2O3 NW/CH3NH3PbI3/NiO NW (named as D2). The high interface quality between beta-Ga2O3 NW electron transport layer (ETL) and CH3NH3PbI3 made the device to operate in self-powered mode. Also, the performance of D2 improved significantly due to the existence of wide band gap and high mobility NiO NW array as a hole transport layer (HTL). At zero bias voltage, very low dark current of 0.32 nA and 4.54 nA were observed for D1 and D2, respectively. Moreover, D2 produced a high responsivity of 254 mA/W which was similar to 9 times higher than that of D1 (28 mA/W) under self-power mode. Furthermore, there was a significant improvement in specific detectivity of D2 (5.23 x 10(11) Jones) as compared to D1 (2.99 x 10(11) Jones).