High Performance Self-Powered UV Photodetector Based on β-Ga2O3 Nanowire/CH3NH3PbI3 Heterostructure

被引：13

作者：

Ashok, Palepu ^{[1
]}

Dhar, Jay Chandra ^{[1
]}

机构：

[1] Natl Inst Technol Nagaland, Dept Elect & Commun Engn, Dimapur 797103, Nagaland, India

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2022年 / 34卷 / 24期

关键词：

Self-powered; deep ultraviolet; ETL; HTL; perovskite; beta-Ga2O3; NiO;

D O I：

10.1109/LPT.2022.3214655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Here, we have designed a novel perovskite-based self-powered deep ultraviolet (DUV) photodetector using hybrid heterostructure of beta-Ga2O3 nanowire (NW)/CH3NH3PbI3 (named as D1) and beta-Ga2O3 NW/CH3NH3PbI3/NiO NW (named as D2). The high interface quality between beta-Ga2O3 NW electron transport layer (ETL) and CH3NH3PbI3 made the device to operate in self-powered mode. Also, the performance of D2 improved significantly due to the existence of wide band gap and high mobility NiO NW array as a hole transport layer (HTL). At zero bias voltage, very low dark current of 0.32 nA and 4.54 nA were observed for D1 and D2, respectively. Moreover, D2 produced a high responsivity of 254 mA/W which was similar to 9 times higher than that of D1 (28 mA/W) under self-power mode. Furthermore, there was a significant improvement in specific detectivity of D2 (5.23 x 10(11) Jones) as compared to D1 (2.99 x 10(11) Jones).

引用

页码：1321 / 1324

页数：4

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