Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods

被引：28

作者：

Rauter, P. ^{[1
]}

Fromherz, T. ^{[1
]}

Winnerl, S. ^{[2
]}

Zier, M. ^{[2
]}

Kolitsch, A. ^{[2
]}

Helm, M. ^{[2
]}

Bauer, G. ^{[1
]}

机构：

[1] Univ Linz, Inst Solid State Phys & Semicond, A-4040 Linz, Upper Austria, Austria

[2] Forschungszentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 26期

关键词：

boron; elemental semiconductors; infrared detectors; ion implantation; semiconductor growth; silicon; submillimetre wave detectors;

D O I：

10.1063/1.3059559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The molecular beam epitaxial (MBE) fabrication of blocked-impurity-band detectors (BIB) has been a technologically complex and delicate matter ever since its demonstration in silicon, and has not been adapted for other material systems offering detection onsets at lower terahertz frequencies. We report the fabrication and characterization of a vertical Si:B BIB, circumventing the intrinsically troublesome MBE growth of an ultrapure blocking layer by employing ion implantation. We present a thorough characterization of our device, which exhibits highly competitive figures of merits. Our results not only increase the accessibility of BIB fabrication tools for ultrasensitive terahertz detection but also open a road to other material systems.

引用

页数：3

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