Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer

被引：94

作者：

Kawakami, Y ^{[1
]}

Peng, AG ^{[1
]}

Narukawa, Y ^{[1
]}

Fujita, S ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] NICHIA CHEM IND LTD, DEPT RES & DEV, ANAN, TOKUSHIMA 774, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 10期

关键词：

D O I：

10.1063/1.117599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved photoluminescence (PL) spectroscopy has been performed at 18 K on excitonic-related emissions in an unintentionally doped hexagonal GaN epitaxial layer grown by two-flow metalorganic chemical vapor deposition (TF-MOCVD), Under low excitation condition, radiative recombination of A free exciton (E(XA): 3.4921 eV) and neutral shallow-acceptor bound exciton [(A(s)(0),X): 3.4805 eV] dominated the spectrum. Decay time of (A(s)(0),X) emission is relatively long (585 ps) indicating a small number of non-radiative centers in the layer. At higher excitation densities, new PL peak appeared at 3.4864 eV and grew superlinearly with excitation densities. These features, combined with their transient behavior, suggest that this new emission band is due to the biexciton recombination. (C) 1996 American Institute of Physics.

引用

页码：1414 / 1416

页数：3

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