Decoupling epitaxial graphene from SiC(0001) by liquid-phase fluorine intercalation

被引：1

作者：

Hao, Xin ^{[1
]}

Chen, Yanfu ^{[1
]}

Wang, Zegao ^{[1
]}

Liu, Jingbo ^{[1
]}

Zhang, Wanli ^{[1
]}

Li, Yanrong ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

MATERIALS EXPRESS | 2013年 / 3卷 / 02期

关键词：

Epitaxial Graphene; Liquid-Phase; Fluorine Intercalation; Buffer Layer; XPS; FILMS; GAS;

D O I：

10.1166/mex.2013.1115

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We propose a liquid-phase fluorine-intercalation method for decoupling epitaxial graphene (EG) grown on SiC(0001) by only immersing EG sample into a mixture solution with HF, HNO3, and Mo plates. The results show that after fluorination, the XPS intensity ratio of C 1s from graphene and SiC significantly increases; moreover, it almost disappeared for the XPS component of the interfacial buffer layer corresponding to the C atoms bonded to the Si atoms of SIC substrate. It is unambiguous that the fluorine atoms intercalate between the buffer layer and SIC substrate, which decouples the graphene layer from the SIC substrate and leads to the increase of the thickness of the graphene layer. It is promising for this liquid-phase fluorine-intercalation method to decouple EG from the SiC(0001) and convert partial of the buffer layer to the graphene layer.

引用

页码：181 / 184

页数：4

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