Room temperature ferromagnetism in new diluted magnetic semiconductor AlN:Mg nanowires

被引：42

作者：

Xu, Yongsheng ^{[1
]}

Yao, Binbin ^{[1
]}

Liu, Dan ^{[2
]}

Lei, Weiwei ^{[2
]}

Zhu, Pinwen ^{[1
]}

Cui, Qiliang ^{[1
]}

Zou, Guangtian ^{[1
]}

机构：

[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Peoples R China

[2] Deakin Univ, Inst Frontier Mat, Geelong, Vic 3216, Australia

来源：

CRYSTENGCOMM | 2013年 / 15卷 / 17期

基金：

中国国家自然科学基金;

关键词：

TRANSPORT-PROPERTIES; GROWTH;

D O I：

10.1039/c3ce26920e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Room-temperature ferromagnetism has been observed in Mgdoped AlN (AlN:Mg) nanowires. The saturation magnetization and the coercivity of the AlN: Mg nanowires are about 0.051 emu g(-1) and 127 Oe, respectively. The Al vacancy and substitutional Mg could play very important roles in room temperature ferromagnetism. These findings confirmed the room temperature ferromagnetism in diluted magnetic semiconductor AlN: Mg nanowires by doping with the nonmagnetic element Mg.

引用

页码：3271 / 3274

页数：4

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