Improvement of the electrical properties of nanocrystalline silicon films by the KrF pulsed excimer laser irradiation method

被引：2
作者：
Song, Chao [1 ]
Li, Cong [2 ,3 ]
Xu, Jun [2 ,3 ]
Huang, Rui [1 ]
Wang, Xiang [1 ]
Song, Jie [1 ]
Guo, Yan Qing [1 ]
机构：
[1] Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou 521041, Peoples R China
[2] Nanjing Univ, Nanjing Natl Lab Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
来源：
LASER PHYSICS | 2013年 / 23卷 / 07期
关键词：
CHEMICAL-VAPOR-DEPOSITION; AMORPHOUS-SILICON; MICROCRYSTALLINE SILICON; THIN-FILMS; CRYSTALLIZATION; SUBSTRATE;
D O I：
10.1088/1054-660X/23/7/076002
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The effects of laser fluence on the microstructure and electrical properties of nanocrystalline silicon films were investigated on samples prepared by a plasma-enhanced chemical vapor deposition technique. It was found that the content of hydrogen in the films could be reduced gradually by increasing the laser fluence, accompanied by the formation of nc-Si. The evolution of hydrogen is responsible for a change in the optical band gap and dark conductivity. By controlling the laser fluence at 1.0 J cm(-2), a dark conductivity as high as 5.9 x 10(-3) S cm(-1) could be obtained. Based on measurements of the temperature-dependent conductivity, the carrier transport processes are discussed. The effusion of hydrogen and the increase of crystallinity are thought to be contributed to the high dark conductivity and low conductivity activation energy.
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页数：4
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