Characteristics of Al-doped c-axis orientation ZnO thin films prepared by the sol-gel method

被引：142

作者：

Xu, ZQ ^{[1
]}

Deng, H ^{[1
]}

Li, Y ^{[1
]}

Guo, QH ^{[1
]}

Li, YR ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2006年 / 41卷 / 02期

关键词：

sol-gel; electrical properties; optical properties;

D O I：

10.1016/j.materresbull.2005.08.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent conducting ZnO thin films doped with Al have been prepared by sol-gel method, which were characterized by X-ray diffraction, atomic force microscopy and ultra-violet spectrometer. The films showed a hexagonal wurtzite structure and high preferential c-axis orientation. The optical transmittance spectra of the films showed the transmittance higher than 85% within the visible wavelength region. A minimum resistivity of 6.2 x 10(-4) Omega CM was obtained for the film doped with 1.5 mol.% Al, preheated at 300 degrees C for 15 min and post-heated at 530 degrees C for 1 h. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：354 / 358

页数：5

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