Preparation and thermochromic properties of Ce-doped VO2 films

被引：42

作者：

Song, Linwei ^{[1
]}

Zhang, Yubo ^{[1
,2
]}

Huang, Wanxia ^{[1
]}

Shi, Qiwu ^{[1
]}

Li, Danxia ^{[1
]}

Zhang, Yang ^{[1
]}

Xu, Yuanjie ^{[1
]}

机构：

[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Sichuan, Peoples R China

[2] Sichuan Engn Tech Coll, Deyang 618000, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2013年 / 48卷 / 06期

基金：

美国国家科学基金会;

关键词：

Optical Materials; Thin films; Sol-gel chemistry; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; TRANSITION; TEMPERATURE; COATINGS;

D O I：

10.1016/j.materresbull.2013.02.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mixture of cerium (III) nitrate hexahydrate and Vanadium pentaoxide powder were used as precursor to prepare Ce-doped VO2 films on the muscovite substrate by inorganic sol-gel method. SEM, XRD and XPS were used to investigate the morphologies and structures of VO2 films. The results show that the VO2 films grow on the muscovite substrate with preferred orientated (0 I 1) plane and the Ce exists in the form of Ce4+ and Ce3+ replacing part of V atoms in the lattice. The infrared transmittance change was measured from room temperature to the temperature above the metal-insulator transition. The films have excellent thermochromic performance. The metal-insulator transition temperature of VO2 films changes appreciably with Ce doped, which decreases by 4.5 degrees C per 1 at.% doping. Furthermore, Ce doping could remarkably reduce the particle size of VO2 films. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：2268 / 2271

页数：4

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