GaInNAs quantum well structures for 1.55 μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

被引：27
|
作者：
Hakkarainen, T [1 ]
Toivonen, J [1 ]
Sopanen, M [1 ]
Lipsanen, H [1 ]
机构：
[1] Helsinki Univ Technol, Optoelect Labs, FIN-02015 Espoo, Finland
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 234卷 / 04期
关键词：
photoluminescence; rapid thermal annealing; metalorganic vapor phase epitaxy; semiconducting materials;
D O I：
10.1016/S0022-0248(01)01750-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
GaInNAs/GaAs multiple quantum well (MQW) structures for long wavelength emission were grown by atmospheric pressure metalorganic vapor phase epitaxy using trimethylgallium, trimethylindium, tertiarybutylarsine and dimethylhydrazine precursors. The dependence of the N concentration and the emission wavelength on the In concentration was investigated. The longest wavelengths were obtained with In concentrations of around 23%. Post-growth rapid thermal annealing was performed to enhance the optical quality of the material. Low-temperature photoluminescence (PL) down to 0.77 eV (1.61 mum) was obtained from a Ga0.74In0.26N0.03As0.97 MQW structure. After annealing the PL wavelength of 1.51 mum was obtained at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：631 / 636
页数：6
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