GaInNAs quantum well structures for 1.55 μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

被引：27

作者：

Hakkarainen, T ^{[1
]}

Toivonen, J ^{[1
]}

Sopanen, M ^{[1
]}

Lipsanen, H ^{[1
]}

机构：

[1] Helsinki Univ Technol, Optoelect Labs, FIN-02015 Espoo, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 234卷 / 04期

关键词：

photoluminescence; rapid thermal annealing; metalorganic vapor phase epitaxy; semiconducting materials;

D O I：

10.1016/S0022-0248(01)01750-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaInNAs/GaAs multiple quantum well (MQW) structures for long wavelength emission were grown by atmospheric pressure metalorganic vapor phase epitaxy using trimethylgallium, trimethylindium, tertiarybutylarsine and dimethylhydrazine precursors. The dependence of the N concentration and the emission wavelength on the In concentration was investigated. The longest wavelengths were obtained with In concentrations of around 23%. Post-growth rapid thermal annealing was performed to enhance the optical quality of the material. Low-temperature photoluminescence (PL) down to 0.77 eV (1.61 mum) was obtained from a Ga0.74In0.26N0.03As0.97 MQW structure. After annealing the PL wavelength of 1.51 mum was obtained at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：631 / 636

页数：6