Studies on piezo coefficients of PLD and sol-gel grown PZT thin film for devices

被引：3
|
作者：
Natarajan, V. [1 ]
Varadarajan, E. [1 ]
Rath, Martando [2 ]
Parui, Jayanta [3 ]
机构：
[1] IIT Madras, Res & Innovat Ctr, Res Pk, Chennai, Tamil Nadu, India
[2] IIT Madras, Dept Phys, Chennai, Tamil Nadu, India
[3] VIT Univ, Dept Chem, Chennai Campus, Chennai, Tamil Nadu, India
来源：
INTEGRATED FERROELECTRICS | 2018年 / 193卷 / 01期
关键词：
Electrical poling; PLD; ferroelectric; piezoelectric coefficient; PZT;
D O I：
10.1080/10584587.2018.1514885
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of electrical (DC) contact poling processes on the ferroelectric and piezoelectric properties of sol-gel and pulsed laser-deposited PZT thin films has been investigated as a function of the poling field, temperature and time. The remnant polarization and piezoelectric coefficient are found to increase with and saturate at dc-poling field of 100- 300kV/cm, temperature of 100-120 degrees C and poling time of 10-20min. as compared with un-poled PZT thin films. The P-E hysteresis loops of poled PLD grown PZT films shows sharper switching behaviour as compared to imbalanced loop in sol-gel grown films. An improvement of piezoelectric and ferroelectric properties of sol-gel PZT thin films is found, as compared to those deposited using pulsed laser deposition (PLD), indicating that a poling process is required for sol-gel PZT thin films.
引用
收藏
页码：100 / 105
页数：6
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