Self-assembled m-plane InGaN quantum dots: formation and shape evolution

被引：6
作者：
Yang, Xuelin [1 ]
Arita, Munetaka [1 ]
Kako, Satoshi [1 ]
Arakawa, Yasuhiko [1 ]
机构：
[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期
关键词：
nonpolar quantum dots; InGaN; MOCVD; strain; TRANSITION; GROWTH; ISLANDS; STRAIN;
D O I：
10.1002/pssc.201100482
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The authors report the formation and shape evolution of m-plane InGaN quantum dots grown on GaN substrates. The formation of the quantum dots is enabled by introducing AlGaN/AlN interlayers prior to the GaN layer. The introduced compressive strain in the GaN layer promotes a growth mode transition during layer growth, from smooth InGaN layer to three dimensional quantum dot structures. The structural transition is consistent with optical properties. Furthermore, we also discuss the shape evolution with different growth conditions and find that the InGaN quantum dots are elongated with decreasing the indium concentration. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：613 / 615
页数：3
相关论文
共 20 条
  • [11] Influence of the strain on the formation of GaInAs/GaAs quantum structures
    Löffler, A
    Reithmaier, JP
    Forchel, A
    Sauerwald, A
    Peskes, D
    Kümmell, T
    Bacher, G
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 286 (01) : 6 - 10
  • [12] Shape transition of coherent three-dimensional (In,Ga)As islands on GaAs(100)
    Ma, WQ
    Nötzel, R
    Schönherr, HP
    Ploog, KH
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (25) : 4219 - 4221
  • [13] InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
    Oliver, RA
    Briggs, GAD
    Kappers, MJ
    Humphreys, CJ
    Yasin, S
    Rice, JH
    Smith, JD
    Taylor, RA
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (04) : 755 - 757
  • [14] Strain-induced polarization in wurtzite III-nitride semipolar layers
    Romanov, A. E.
    Baker, T. J.
    Nakamura, S.
    Speck, J. S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)
  • [15] Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes
    Sek, G.
    Musial, A.
    Podemski, P.
    Syperek, M.
    Misiewicz, J.
    Loeffler, A.
    Hoefling, S.
    Worschech, L.
    Forchel, A.
    [J]. JOURNAL OF APPLIED PHYSICS, 2010, 107 (09)
  • [16] Microstructures produced during the epitaxial growth of InGaN alloys
    Stringfellow, G. B.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2010, 312 (06) : 735 - 749
  • [17] SHAPE TRANSITION IN GROWTH OF STRAINED ISLANDS - SPONTANEOUS FORMATION OF QUANTUM WIRES
    TERSOFF, J
    TROMP, RM
    [J]. PHYSICAL REVIEW LETTERS, 1993, 70 (18) : 2782 - 2785
  • [18] Strong phase separation of strained InxGa1-xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots
    Tessarek, C.
    Figge, S.
    Aschenbrenner, T.
    Bley, S.
    Rosenauer, A.
    Seyfried, M.
    Kalden, J.
    Sebald, K.
    Gutowski, J.
    Hommel, D.
    [J]. PHYSICAL REVIEW B, 2011, 83 (11)
  • [19] Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
    Waltereit, P
    Brandt, O
    Trampert, A
    Grahn, HT
    Menniger, J
    Ramsteiner, M
    Reiche, M
    Ploog, KH
    [J]. NATURE, 2000, 406 (6798) : 865 - 868
  • [20] Yamada H, 2008, APPL PHYS EXPRESS, V1, DOI [10.1143/APEX.1.041101, 10.1143/APEX.1041101]
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