Self-assembled m-plane InGaN quantum dots: formation and shape evolution

被引：6
作者：
Yang, Xuelin [1 ]
Arita, Munetaka [1 ]
Kako, Satoshi [1 ]
Arakawa, Yasuhiko [1 ]
机构：
[1] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期
关键词：
nonpolar quantum dots; InGaN; MOCVD; strain; TRANSITION; GROWTH; ISLANDS; STRAIN;
D O I：
10.1002/pssc.201100482
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The authors report the formation and shape evolution of m-plane InGaN quantum dots grown on GaN substrates. The formation of the quantum dots is enabled by introducing AlGaN/AlN interlayers prior to the GaN layer. The introduced compressive strain in the GaN layer promotes a growth mode transition during layer growth, from smooth InGaN layer to three dimensional quantum dot structures. The structural transition is consistent with optical properties. Furthermore, we also discuss the shape evolution with different growth conditions and find that the InGaN quantum dots are elongated with decreasing the indium concentration. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：613 / 615
页数：3
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