Single-walled carbon nanotube synthesis on SiO2/Si substrates at very low pressures by the alcohol gas source method using a Pt catalyst

被引：19

作者：

Mizutani, Yoshihiro ^{[1
]}

Fukuoka, Naoya ^{[1
]}

Naritsuka, Shigeya ^{[1
]}

Maruyama, Takahiro ^{[1
]}

Iijima, Sumio ^{[1
,2
]}

机构：

[1] Meijo Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4688502, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nanotube Res Ctr, Tsukuba, Ibaraki 3058565, Japan

来源：

基金：

日本学术振兴会;

关键词：

Carbon nanotube; Chemical vapor deposition; Pt catalyst; Low temperature growth; CHEMICAL-VAPOR-DEPOSITION; HIGH-VACUUM; GROWTH;

D O I：

10.1016/j.diamond.2012.04.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A platinum catalyst was used for single-walled carbon nanotube (SWCNT) growth on SiO2/Si substrates using an alcohol gas source method, a type of cold-wall chemical vapor deposition. Compared to Co, a conventional transition metal catalyst, the optimal ethanol pressure was considerably reduced in the growth at 700 degrees C, and SWCNTs could be grown even at an ambient ethanol pressure of 1 x 10(-5) Pa. Raman spectroscopy measurements showed that the G/Si ratios of SWCNTs grown at 700 degrees C with the Pt catalyst under an ethanol pressure between 1 x 10(-4) and 1 x 10(-1) Pa was larger than that grown with Co catalyst under optimal conditions (700 degrees C, 1 x 10(-1) Pa), indicating that the Pt catalyst is suitable for SWCNT growth under a low ethanol pressure. In addition, the diameter distributions of SWCNTs grown with the Pt catalyst were narrower than those grown with the Co catalyst. Taking into account the results by transmission electron microscopy observation, the diameter reduction was caused by the smaller migration distance of Pt on the substrate. Based on these results, we discuss the growth mechanism of SWCNTs from the Pt catalyst. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：78 / 82

页数：5

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