Properties of near-surface layer of 64Zn+ ion hot-implanted Si

被引:4
作者
Privezentsev, Vladimir [1 ]
Kulikauskas, Vaclav [2 ]
Steinman, Eduard [3 ]
Tereshchenko, Alexey [3 ]
Bazhenov, Anatoly [3 ]
Tabachkova, Nataliya [4 ]
Batrakov, Alexander [5 ]
机构
[1] Russian Acad Sci, Inst Phys & Technol, Moscow 117218, Russia
[2] Moscow MV Lomonosov State Univ, Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia
[3] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Dist, Russia
[4] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia
[5] Natl Res Univ MPEI, Moscow 111250, Russia
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 8 | 2015年 / 12卷 / 08期
关键词
Si; ion implantation; Zn; nanoparticles; ZnO; NANOPARTICLES;
D O I
10.1002/pssc.201400234
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated nanoparticles (NPs) formation in Si by Zn-64(+) ion implantation at substrate temperature of 350 degrees C. Hot implantation was chosen to avoid amorphization of Si near-surface layer. In as-implanted samples the Zn crystal NPs were created. Then the samples were subsequently subjected to isochronous annealing in oxygen at elevated temperatures. The depth profile of implanted Zn was analyzed by Rutherford backscattering spectroscopy. The dependence of photo-luminescence spectra on annealing temperatures was observed. In these spectra the peak at 370 nm attributable to ZnO phase and wide peak at 430 nm due to defects were revealed. The visualization and identification of NPs were obtained by transmission electron microscopy and transmission electron diffraction of cross-section samples. From these study it follows, that after annealing at temperature of 700 degrees C and higher the NPs with structure of Zn(core)/ZnO center dot Zn2SiO4(shell) were formed. Auger electron spectroscopy investigation followed the phase content in depth profile was varied from ZnO center dot Zn2SiO4 at a substrate surface to metal Zn in a substrate body. [GRAPHICS] . (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:1170 / 1174
页数:5
相关论文
共 13 条
  • [1] Criteria for surface plasmon resonance energy of metal nanoparticles in silica glass
    Amekura, H
    Takeda, Y
    Kishimoto, N
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 222 (1-2) : 96 - 104
  • [2] Amekura H., 2009, Toward Functional Nanomaterials, P1
  • [3] Amekura H., 2011, Mater. Lett, V222, P96
  • [4] Electrically pumped ultraviolet ZnO diode lasers on Si
    Chu, Sheng
    Olmedo, Mario
    Yang, Zheng
    Kong, Jieying
    Liu, Jianlin
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (18)
  • [5] Improved dye-sensitized solar cells with a ZnO-nanoflower photoanode
    Jiang, C. Y.
    Sun, X. W.
    Lo, G. Q.
    Kwong, D. L.
    Wang, J. X.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (26)
  • [6] ATOMISTIC CALCULATION OF OXYGEN DIFFUSIVITY IN CRYSTALLINE SILICON
    JIANG, Z
    BROWN, RA
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (11) : 2046 - 2049
  • [7] Kreibig U., 1995, Optical properties of metal clusters, V25
  • [8] Enhanced field emission from injector-like ZnO nanostructures with minimized screening effect
    Li, C.
    Yang, Y.
    Sun, X. W.
    Lei, W.
    Zhang, X. B.
    Wang, B. P.
    Wang, J. X.
    Tay, B. K.
    Ye, J. D.
    Lo, G. Q.
    Kwong, D. L.
    [J]. NANOTECHNOLOGY, 2007, 18 (13)
  • [9] Preferred orientation of ZnO nanoparticles formed by post-thermal annealing zinc implanted silica
    Liu, YX
    Liu, YC
    Shen, DZ
    Zhong, GZ
    Fan, XW
    Kong, XG
    Mu, R
    Henderson, DO
    [J]. SOLID STATE COMMUNICATIONS, 2002, 121 (9-10) : 531 - 536
  • [10] Strain effects on exciton resonance energies of ZnO epitaxial layers
    Makino, T
    Yasuda, T
    Segawa, Y
    Ohtomo, A
    Tamura, K
    Kawasaki, M
    Koinuma, H
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (09) : 1282 - 1284