Luminescent properties of BexCd1-xSe thin films

被引：7

作者：

Maksimov, O ^{[1
]}

Muñoz, M

Tamargo, MC

机构：

[1] Penn State Univ, Ctr Electroopt, Freeport, PA 16229 USA

[2] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA

[3] CUNY City Coll, Dept Chem, New York, NY 10031 USA

来源：

MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 01期

关键词：

II-VI ternary alloy; photoluminescence; CdSe; BeSe;

D O I：

10.1016/j.mejo.2005.06.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report photoluminescence (PL) study of BexCd(1-x)Se epitaxial layers (x < 0.21) grown by molecular beam epitaxy on InP substrates. Continuous wave PL spectra are taken within a 4.2-300 K temperature range. We observe an anomalous 's-shaped' temperature dependence of emission energy and a severe decrease of emission intensity with the increase of temperature. We explain an 's-shaped' temperature dependence of emission energy by exciton localization in the potential minima at low temperatures followed by thermal activation at higher temperatures. We attribute low emission intensity at high temperatures to exciton dissociation and electron/hole migration to non-radiative recombination centers. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：19 / 21

页数：3

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