GaAs quantum dots with a high density on a GaAs (111)A substrate

被引：42

作者：

Kim, Jong Su ^{[1
]}

Jeong, Mun Seok

Byeon, Clare C.

Ko, Do-Kyeong

Lee, Jongmin

Kim, Jin Soo

Kim, In-Soo

Koguchi, Nobuyuki

机构：

[1] Gwangju Inst Sci & Technol, Adv Photon Res Inst, Kwangju 500712, South Korea

[2] Elect & Telecommun Res Inst, Taejon 305350, South Korea

[3] Kyungwoon Univ, Gumi 730739, Gyengsangbuk Do, South Korea

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 24期

关键词：

D O I：

10.1063/1.2213012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The GaAs quantum dots (QDs) on an AlGaAs/GaAs (111)A surface grown by a droplet epitaxy have a density of 1.6x10(11)/cm(2), which is relatively higher than those (1.3x10(10)/cm(2)) on an AlGaAs/GaAs (001) surface. The formation of highly dense GaAs QDs on the (111)A surface can be explained by the relatively short surface migration of Ga atoms. The GaAs QDs on AlGaAs/GaAs (111)A showed the intense photoluminescence (PL) and a relatively narrower PL linewidth compared to that of the GaAs QDs on AlGaAs/GaAs (001), indicating that the QDs on the GaAs (111)A substrate have a high crystal quality and high uniformity than those on GaAs (001). (c) 2006 American Institute of Physics.

引用

页数：3

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