Ternary compound Ti3SiC2:: Part I.: Pulse discharge sintering synthesis

被引:68
作者
Sun, ZM [1 ]
Zhang, ZF [1 ]
Hashimoto, H [1 ]
Abe, T [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Sendai, Miyagi 9838551, Japan
关键词
titanium silicon carbide; synthesis; pulse discharge sintering; stoichiometric composition; secondary phase; density;
D O I
10.2320/matertrans.43.428
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pulse discharge sintering (PDS) technique was employed to synthesize the temary compound Ti3SiC2 from four starting powder mixtures. The experimental results demonstrated that when the starting material of 3Ti/Si/2C or 3Ti/SiC/C was used high content of the secondary phase. TiC. higher than 30mass%, was found in the sintered material. When TiC powder as starting material was used (Ti/Si/2TiC) in the same stoichiometric composition. however. the final sintered product contained low TiC content of a few percent. Further adjusting the composition to the off-stoichiometric of 2Ti/2Si/3TiC. the content of the secondary phase TiC was further controlled to be around 1 mass%. In the materials sintered from Ti/Si/2TiC and 2Ti/2Si/3TiC an optimum sintering temperature exists at 1573 K, at which the highest Ti3SIC2 phase purity was achieved. When sintered at the optimum temperature a density of higher than 99% was obtained. At the optimum sintering temperature. both the phase purity and the density of the material sintered from 2Ti/2SU3TiC showed er little dependence on the sintering time ranging from a few minutes to four hours. indicating the phase stability, at this temperature.
引用
收藏
页码:428 / 431
页数:4
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